Compact Modeling of GaN Based RF Switches: Invited Paper
This work introduces a SPICE-compatible compact model for GaN-based dual-gate RF switches. The model is width-scalable and improves accuracy in RF, largesignal, and harmonic balance simulations by using a robust gate network to represent the distributed nature of the serpentine gate. The model is validated against experimental data for multiple device peripheries.
Authors
- Mohammad Sajid Nazir (ORCID: https://orcid.org/0000-0002-0303-4914)
- Yogesh Singh Chauhan (ORCID: https://orcid.org/0000-0002-3356-8917)
- Ahtisham Pampori (ORCID: https://orcid.org/0000-0001-7758-6239)
- Mir Mohammad Shayoub
Institutions
- Indian Institute of Technology Kanpur (IN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041454
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26