A CMOS-Compatible MoS₂ Transistor on Silicon-Rich Silicon Nitride as Multifunctional Neuromorphic Device

Neuromorphic systems process information efficiently, but scalable hardware implementation of synaptic units remains challenging. In this work, we fabricated silicon-rich silicon nitride films as the gate dielectric and leveraged charge trap interactions with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}$</tex> to simulate both electrical and optoelectronic synaptic functions in a single device. This device exhibits excellent linearity with positive weights (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}^{2}=0.99$</tex>) and demonstrates significant photo-induced shortterm plasticity. Additionally, the entire fabrication process is CMOS-compatible, facilitating large-scale integration.