6773 PPI GaN-Based Blue Micro-LED Displays Fabricated by Monolithic Integration Technology

This study employs monolithic integration technology to fabricate Micro-LED display devices, which present a 0.12-inch, 640×480 blue active-matrix display with an ultra-high pixel density of 6773 pixels per inch (PPI), featuring a pixel size of 1.80 μm and a pixel pitch of 3.75 μm. The paper provides a detailed discussion of the fabrication process and the unique design approach used. Our Micro-LED display exhibits a luminance uniformity of 76.00% at 2 A/cm² and achieves a maximum brightness of 18,720 nits at 3 A/cm² under full-load conditions. These results demonstrate the tremendous potential of Micro-LED technology for high-resolution near-eye display applications.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-06-30
DOI
https://doi.org/10.1109/led.2025.3584085
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
2.52

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article

6773 PPI GaN-Based Blue Micro-LED Displays Fabricated by Monolithic Integration Technology

Lan Xun, Hongsheng Zhang, Zheng Qin, Lei Xu et al.
2 citations
IEEE Electron Device Letters
GaN-based semiconductor devices and materials
2.52
article

6773 PPI GaN-Based Blue Micro-LED Displays Fabricated by Monolithic Integration Technology

Lan Xun, Hongsheng Zhang, Zheng Qin, Lei Xu, Kaiyi Wu, Guangchao Dai, Qi Wang, Xiaofeng Chen, Xin Zheng, Liang Tian, Yi Huang, Xianjing Zhou, Yongzhou Zhao, Tian Tang, Feifan Ma, Yongxing Liu
article en
2 citations

Abstract

This study employs monolithic integration technology to fabricate Micro-LED display devices, which present a 0.12-inch, 640×480 blue active-matrix display with an ultra-high pixel density of 6773 pixels per inch (PPI), featuring a pixel size of 1.80 μm and a pixel pitch of 3.75 μm. The paper provides a detailed discussion of the fabrication process and the unique design approach used. Our Micro-LED display exhibits a luminance uniformity of 76.00% at 2 A/cm² and achieves a maximum brightness of 18,720 nits at 3 A/cm² under full-load conditions. These results demonstrate the tremendous potential of Micro-LED technology for high-resolution near-eye display applications.

IEEE Electron Device LettersVol. 46(9)
Chongqing University of Posts and Telecommunications (CN), Nanjing University of Science and Technology (CN), Konka (China) (CN), San’an Optoelectronics (China) (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 11%
GaN-based semiconductor devices and materials
2.52
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6773 PPI GaN-Based Blue Micro-LED Displays Fabricated by Monolithic Integration Technology — Lan Xun, Hongsheng Zhang, et al. · IEEE Electron Device Letters (2025) | TGRS Research Map | TGRS