Device Considerations for GaN Power Switching Transistors from Application and Reliability Perspectives (Invited)
In this work, detailed analysis and discussion on the design of state-of-the-art enhancement and depletion-mode (E/Dmode) GaN power switching transistors considering application and reliability are presented. Key challenges and issues during the development phase are elaborated with a summary of potential solutions at device and circuit system levels providing useful technical reference for a designer using GaN device for targeting power electronics application with high energy efficiency and robustness.
Authors
- Zhikai Tang (ORCID: https://orcid.org/0000-0001-5747-3595)
- Jungwoo Joh (ORCID: https://orcid.org/0000-0001-5289-9968)
- Tim Merkin
- Dong Seup Lee
- Jeffrey Morroni
- Maik Peter Kaufmann (ORCID: https://orcid.org/0000-0002-9954-132X)
- Chang Soo Suh
- S.R. Bahl
Institutions
- Texas Instruments (Germany) (DE)
- Texas Instruments (United States) (US)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041428
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00