Invertible Prediction Model for Si<sub>3</sub>N<sub>4</sub> Wet Etching Using DHF
Optimizing semiconductor fabrication is challenging due to numerous recipe parameters. This study explores various nozzle operations and wafer rotation speeds to enable selective Si<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> etching using dilute hydrogen fluoride (DHF). By using measured etching rate (ER), the invertible model dependent on the nozzle scanning period is constructed, enabling determination of etching recipes for the desired ER results. The model is sufficiently accurate for complex scanning patterns, providing a practical tool for process optimization.
Authors
- Takashi Ota (ORCID: https://orcid.org/0000-0003-3902-8230)
- Ken Takeuchi (ORCID: https://orcid.org/0000-0002-9345-6503)
- Koji Ando (ORCID: https://orcid.org/0000-0002-6102-0019)
- Naoko Misawa
- Chihiro Matsui (ORCID: https://orcid.org/0000-0003-4594-6839)
- Koki Shibata
Institutions
- Tokyo University of Information Sciences (JP)
- SCREEN (Japan) (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041419
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00