Leveraging Ferroelectric Negative-Capacitance Effect for Energy Efficient Electronics

This work, through experimentally calibrated Ginzburg-Landau-Khalatnikov model for an ultrathin ferroelectric (1.5 nm) with stacked-GAA FETs, investigates and analyzes the potential for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DD}}$</tex> reduction via the ferroelectric negative-capacitance (NC) effect based on the IRDS 2025-2031 nodes. Our study suggests that the ferroelectric NC effect may enable a reduction in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DD}}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 0.4 \mathrm{V}$</tex> for 2028 and 2031 nodes. In addition, an IL-free FE-GAA design may further reduce the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{V}_{\text{DD}}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 0.35 \mathrm{V}$</tex>, provided that the impact of mobility degradation can be mitigated. Our study may provide insights for future energy efficient electronics.