The Ultra-Thin Al<sub>2</sub>O<sub>3</sub> Oxide Layer via ALD Repaired Si Channel Interface and Optimizied Subthreshold Characteristics and Reduced Leakage Current by 96.2%
This study proposes a p-type GAA NSFET with an interfacial <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Al}_{2} \mathrm{O}_{3} / \text{HfO}_{2}$</tex> stacked dielectric to achieve an excellent oxide interface, the electrical and interface characteristics were investigated. Adding one layer of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Al}_{2} \mathrm{O}_{3}$</tex> results in a threshold voltage shift and a 29 % reduction in interface state density. The subthreshold swing (SS) of the device is reduced from 69.6 to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$63.1 \text{mV} / \text{dec}$</tex>. Furthermore, the leakage current is decreased by 96.2 %, significantly enhancing the electrical characteristics of the device.
Authors
- Q. Li (ORCID: https://orcid.org/0009-0002-4764-7541)
- Huaxiang Yin (ORCID: https://orcid.org/0000-0001-8066-6002)
- Renjie Jiang (ORCID: https://orcid.org/0009-0001-7072-0359)
- Zhongrui Wang (ORCID: https://orcid.org/0000-0003-2264-0677)
- Lianlian Li (ORCID: https://orcid.org/0009-0006-8143-1241)
- Peng Wang (ORCID: https://orcid.org/0000-0002-7287-7595)
- Hang Zhang (ORCID: https://orcid.org/0000-0001-5113-6125)
- Qingzhu Zhang (ORCID: https://orcid.org/0000-0002-2026-8261)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Microelectronics (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041682
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00