Boosted Performance of Atomic-Layer-Deposited Dual-Gate Indium-Gallium-Zinc-Oxide Transistors

In this work, an oxygen-rich surface passivation process was applied to ALD IGZO transistors, effectively reducing the oxygen vacancy density within the channel while maintaining a relatively low contact resistance. The dual-gate transistors with improved electrostatic control capability demonstrate boosted performance compared to the back-gate transistors, achieving a record-high Ion of 2.24 mA/μm and gm of over 1 mS/μm for 50 nm short-channel device at V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</inf> = 1 V, the highest values among IGZO transistors.