Contact Engineering of 1L-WSe<sub>2</sub> p-FETs: Straightforward WO<sub>x</sub> Doping and Thickness Dependence

This study presents a straightforward <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{WO}_{\mathrm{x}}$</tex> doping strategy for the contact region of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 \mathrm{L}-\text{WSe}_{2}$</tex> FETs, utilizing e-beam evaporated <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{WO}_{3}$</tex> bulk. We investigate the dopant thickness dependence, revealing that at an optimal thickness of 20 nm, the maximum on current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{on }}$</tex>, max increases by <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 100$</tex> times, while maintaining an on-off ratio exceeding seven orders. This strategy paves the way for developing Ohmic contacts in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 \mathrm{L}-\text{WSe}_{2}$</tex> FETs.

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Published
2025-03-09
DOI
https://doi.org/10.1109/edtm61175.2025.11040906
Primary Topic
2D Materials and Applications
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article
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article

Contact Engineering of 1L-WSe2 p-FETs: Straightforward WOx Doping and Thickness Dependence

Yanda Zhu, Sean Li, J. C. C. Hwang, Wenyu Wang et al.
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2D Materials and Applications
article

Contact Engineering of 1L-WSe2 p-FETs: Straightforward WOx Doping and Thickness Dependence

Yanda Zhu, Sean Li, J. C. C. Hwang, Wenyu Wang, Yun Li, Ziyi Wang, Jing‐Kai Huang, Lin Xi, Jiacan Su
article en

Abstract

This study presents a straightforward <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{WO}_{\mathrm{x}}$</tex> doping strategy for the contact region of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 \mathrm{L}-\text{WSe}_{2}$</tex> FETs, utilizing e-beam evaporated <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{WO}_{3}$</tex> bulk. We investigate the dopant thickness dependence, revealing that at an optimal thickness of 20 nm, the maximum on current <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{\text{on }}$</tex>, max increases by <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 100$</tex> times, while maintaining an on-off ratio exceeding seven orders. This strategy paves the way for developing Ohmic contacts in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 \mathrm{L}-\text{WSe}_{2}$</tex> FETs.

City University of Hong Kong (HK), UNSW Sydney (AU), Division of Materials Science and Engineering (AU), University of Hong Kong (HK)
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2D Materials and Applications
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Contact Engineering of 1L-WSe<sub>2</sub> p-FETs: Straightforward WO<sub>x</sub> Doping and Thickness Dependence — Yanda Zhu, Sean Li, et al. · (2025) | TGRS Research Map | TGRS