Novel GaN Integrated Photonics for Advanced Optical Communication and Imaging

This work presents two significant advances in monolithic III-nitride optoelectronics for optical communication. First, optimized triangular micro-diodes are demonstrated to achieve high modulation bandwidth and responsivity, enabling efficient bidirectional data transmission. Second, a novel three-terminal diode architecture is introduced, offering tunable light emission and reconfigurable logic functionality. These innovations collectively enhance emission efficiency, detection speed, and multifunctionality, significantly advancing the development of integrated onchip optoelectronic systems for next-generation optical communication technologies.