Fabrication and Research of Wide-Bandgap Semiconductor AIN-Based Unipolar Memristors

Wide-bandgap semiconductor aluminum nitride (AlN) has a wide range of applications. Here we designed memristors of Al (100 nm) /AlN (10 nm) /Al (100 nm) structure using plasma-enhanced atomic layer deposition (PEALD) and sputtering, which is compatible with CMOS technology and has the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}_{\text {OFF }} / \mathrm{R}_{\text {ON }}$</tex> ratio of 3600 times. The special electrode design allows to exhibit interesting unipolarity, enabling SET and RESET operations through only unidirectional voltage. This research reports a new structure of AlN-based memristors, which also inspires further enriching the applications of wide-bandgap semiconductor AlN.