A Universal Method to Regulate Contact Resistance in Thin Film Transistors
An atomic layer deposited ultrathin <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Al}_{2} \mathrm{O}_{3}$</tex> film by using different oxygen precursors (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{H}_{2} \mathrm{O}$</tex> or <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{O}_{3}$</tex>) is demonstrated to improve the contact properties of a-IGZO/Mo through different mechanisms. Combining the different processes serves as an easy-to-compliment and universal method to custom design the contact properties between channel and source/drain electrodes for oxide semiconductor based thin film transistors.
Authors
- Yanxia Cui (ORCID: https://orcid.org/0000-0001-5756-0795)
- Hongwei Hao (ORCID: https://orcid.org/0000-0003-2019-516X)
- Shan‐Ting Zhang
- Guohui Li (ORCID: https://orcid.org/0000-0001-8223-705X)
- Dongdong Li (ORCID: https://orcid.org/0000-0003-3219-181X)
- Chen Chen (ORCID: https://orcid.org/0000-0003-1112-6146)
- Yuan Wei
Institutions
- Shanghai Zhangjiang Laboratory (CN)
- Taiyuan University of Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041378
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00