Investigation of Enhanced Robustness Against Floating-Substrate-Induced Dynamic R_ON Degradation in 900-V p-GaN Gate HEMT Using Virtual-Body Technology

In this work, the enhanced robustness against floating-substrate-induced dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> degradation in 900-V p-GaN gate HEMT with virtual body (VB-HEMT) is investigated. By adopting floating Si substrate, the breakdown voltage is boosted to 1779 V. Hole injection and buried AlGaN are found both essential for the formation of virtual body to suppress floating-substrate-induced negative buffer trapping effects. The VB-HEMT shows a superior dynamic <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> /static <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$R_{\text{ON}}$</tex> ratio of 1.43 after 900-V <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{\text{DS}-\text{OFF}}$</tex> stress with floating substrate.