Ultrafast Photoresponse of Vertical Diodes Utilizing WSe<sub>2</sub>/ITO Schottky Junctions
Schottky diodes are widely utilized in optoelectronics. In this study, we fabricated a vertical photodiode using a WSe2/ITO Schottky junction. The device exhibited an impressively low dark current of 0.7 pA and an ultrafast light response time of 13 ns, with a broadband photo-response across the entire visible spectrum. These exceptional results offer a promising approach for developing high-performance photodiodes in the future.
Authors
- Yang Chai (ORCID: https://orcid.org/0000-0002-8943-0861)
- Jie Chen (ORCID: https://orcid.org/0000-0001-7925-3729)
- Qingqing Sun (ORCID: https://orcid.org/0000-0002-6533-1834)
- Xixi Jiang (ORCID: https://orcid.org/0000-0003-4850-1245)
- Shukui Zhang (ORCID: https://orcid.org/0000-0002-7870-4628)
- Jingli Wang
Institutions
- Hong Kong Polytechnic University (HK)
- Fudan University (CN)
- Shanghai Fudan Microelectronics (China) (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041576
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation