975V/4.3M $\Omega \cdot \text{cm}^{2}$ Enhancement-Mode (001) $\beta-\text{Ga}_{2} \mathrm{O}_{3}$ Vertical Multi-Fin Power Transistors

This work reports a high-performance enhancement-mode <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}_{2} \mathrm{O}_{3}$</tex> multi-fin field-effect transistor (FinFET). Utilizing a non-metal mask etching and self-aligned process based on photoresist planarization. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}_{2} \mathrm{O}_{3}$</tex> FinFET exhibited a maximum output current density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$361.5 \mathrm{A} / \text{cm}^{2}$</tex>, a peak transconductance of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$127 \mathrm{S} / \text{cm}^{2}$</tex>, a specific on-resistance of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$4.3 \mathrm{m} \Omega \cdot \text{cm}^{2}$</tex>, a breakdown voltage of 975 V, and a power figure of merit (PFOM) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.22 \text{GW} / \text{cm}^{2}$</tex>. These results demonstrate the feasibility of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}_{2} \mathrm{O}_{3}$</tex> power transistors for large-area applications.