Capacitive Length-Extension Mode Resonators with Stress-Induced Gap-Closing Electrodes for Motional Resistance Reduction
This work presents a capacitive length-extension mode resonator featuring novel gap-closing electrodes, which apply nonuniform stress to the structure of the movable electrodes to reduce the capacitive transduction gaps to sub-micrometer-level values after the device is released. This approach overcomes the limitations of deep etching. Sub-100 nm capacitive transduction gaps are obtained, and the equivalent impedance of the resonator is significantly reduced.
Authors
- Tiger H. Tao (ORCID: https://orcid.org/0000-0002-6583-5039)
- Yi Sun (ORCID: https://orcid.org/0000-0003-2342-4917)
- Fang Wang (ORCID: https://orcid.org/0009-0006-5073-8806)
- Hao Yu (ORCID: https://orcid.org/0009-0004-5199-6570)
- Miao Yu (ORCID: https://orcid.org/0000-0003-1703-0305)
- Heng Yang (ORCID: https://orcid.org/0000-0002-8873-9576)
- Ke Sun (ORCID: https://orcid.org/0000-0002-3279-7267)
Institutions
- Shanghai Institute of Microsystem and Information Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040724
- Primary Topic
- Advanced MEMS and NEMS Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00