Synergistic Optimization of Thermal and Electrical Performances in Hetero-integrated β-Ga<sub>2</sub> O<sub>3</sub> SBDs

This work combines 3D Raman thermography with electrothermal simulations to study the thermal behaviors of hetero-integrated <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex>-on-SiC (GaOISiC) and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> bulk Schottky barrier diodes (SBDs). It shows the benefits of hetero-integration in significantly enhancing heat dissipation. Moreover, we optimize the electrode layouts in GaOISiC SBDs by balancing electrical and thermal characteristics to improve performance. These techniques are beneficial for accurate temperature measurement and effective heat dissipation, which are crucial for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex>-based devices.

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Published
2025-03-09
DOI
https://doi.org/10.1109/edtm61175.2025.11040213
Primary Topic
Ga2O3 and related materials
Type
article
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article

Synergistic Optimization of Thermal and Electrical Performances in Hetero-integrated β-Ga2 O3 SBDs

Yang He, Huarui Sun, Wenhui Xu, Tiangui You et al.
3 links
Ga2O3 and related materials
article

Synergistic Optimization of Thermal and Electrical Performances in Hetero-integrated β-Ga2 O3 SBDs

Yang He, Huarui Sun, Wenhui Xu, Tiangui You, Yinfei Xie, Xin Ou, Zhengyue Li
article en

Abstract

This work combines 3D Raman thermography with electrothermal simulations to study the thermal behaviors of hetero-integrated <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex>-on-SiC (GaOISiC) and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex> bulk Schottky barrier diodes (SBDs). It shows the benefits of hetero-integration in significantly enhancing heat dissipation. Moreover, we optimize the electrode layouts in GaOISiC SBDs by balancing electrical and thermal characteristics to improve performance. These techniques are beneficial for accurate temperature measurement and effective heat dissipation, which are crucial for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta$</tex> - <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Ga}_{2} \mathrm{O}_{3}$</tex>-based devices.

Chinese Academy of Sciences (CN), Harbin Institute of Technology (CN), Shanghai Institute of Microsystem and Information Technology (CN), Ministry of Industry and Information Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 91%
Ga2O3 and related materials
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