Investigation of High-Sensitivity Pressure Sensor Integrated with InSnZnO Thin-film Transistors
With the demand for flexible pressure sensors in wearable devices and medical applications, piezoelectric sensors stand out for their self-powering and fast response. This paper presents a PVDF/ZnO@MXene (PZM) sensor with high sensitivity (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.32 ~\mathrm{V} ~\mathrm{N}^{-1}$</tex>), detection of different items, and fast response (46 ms). The PZM sensor integrated with ITZO TFT for signal amplification demonstrates stable performance, highlighting its potential for use in personalized identification, human-computer interaction, and soft robotics.
Authors
- Rongsheng Chen (ORCID: https://orcid.org/0000-0002-7247-8420)
- Wei Huang (ORCID: https://orcid.org/0000-0001-8279-6345)
- Ming Li (ORCID: https://orcid.org/0000-0001-7450-6205)
- Mei Yang (ORCID: https://orcid.org/0000-0002-0959-2722)
Institutions
- South China University of Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11041416
- Primary Topic
- Gas Sensing Nanomaterials and Sensors
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China