Electrical Transport at n-Ga<sub>2</sub>O<sub>3</sub>/n-SiC Hetero-Interface Constructed by Hydrophilic and Surface Activated Bonding
The n-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/n-SiC (GaOSiC) hetero-structure was achieved by ion-cutting process based on surface activated bonding (SAB) and hydrophilic bonding (HB) techniques. The HB GaOSiC hetero-interface showed an amorphous layer of only ~1 nm, contributing to 16.87% of the total on-resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,total</inf>) for the GaOSiC structure, which is much less than that of the SAB hetero-interface. The low interface resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</inf>) of HB GaOSiC structure provides a feasible path towards the vertical β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> power electronics with high power operating capability and acceptable heat dissipation performance.
Authors
- Zhenyu Qu (ORCID: https://orcid.org/0000-0002-9261-0601)
- Haowen Guo (ORCID: https://orcid.org/0000-0002-1901-3958)
- Yeliang Wang (ORCID: https://orcid.org/0000-0002-8896-0748)
- Wenhui Xu (ORCID: https://orcid.org/0000-0002-5152-9196)
- Haodong Jiang (ORCID: https://orcid.org/0000-0001-6760-5336)
- Xin Ou (ORCID: https://orcid.org/0000-0002-0316-9958)
- Min Zhou (ORCID: https://orcid.org/0009-0003-4057-6944)
- Tiancheng Zhao (ORCID: https://orcid.org/0000-0002-4166-6189)
- Tiangui You
Institutions
- Chinese Academy of Sciences (CN)
- ShanghaiTech University (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
Publication Details
- Published
- 2025-03-09
- DOI
- https://doi.org/10.1109/edtm61175.2025.11040998
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Science and Technology Commission of Shanghai Municipality