The Press Pack Packaging for Power IGBTs With Extremely High Current and Thermal Performance

In this paper, the press pack packaging for power IGBTs with extremely high current and thermal performance is proposed to meet the power and reliability requirement of the HVDC system. A new structure D-type PP IGBT that combines the advantages of P-type and S-type PP IGBTs to improve the current and reliability is proposed. Finite Element (FE) simulation is firstly performed to analyze the electrical behavior and thermal performance of the D-type PP IGBT. It was found that D-type PPI structure can be customized in the form of a PCB to adjust the value of the resistance in the gate loop to obtain a more uniform current distribution when the chip is turned on, which was verified on 6000A and even 10000A devices. In addition, the device has a more uniform pressure and temperature distribution and can have a smaller thermal resistance with even smaller clamping force. Junction temperature distribution is the most important parameter for PP IGBTs with multi-chips in parallel. Finally, it is therefore experimentally verified that the proposed structure has a more uniform temperature distribution compared to the P-type PP IGBT with the same chip, only different package form, and a smaller size and higher current density compared to the S-type PP IGBT.