Field Curvature Aberration Correction Using Cylindrically Curved CMOS Image Sensors

We demonstrate the lateral field curvature aberration correction of a lens employing a cylindrically curved complementary metal-oxide-semiconductor (CMOS) image sensor without using multiple lenses. By employing a silicon-on-insulator (SOI) structure and applying etching using xenon fluoride, we fabricated an extremely thin CMOS image sensor with an 11-μm thickness without causing damage to the CMOS circuitry. Because of the structural characteristics of SOI, i.e., extremely small thickness and high SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> content, the fabricated CMOS image sensor is flexible and does not break easily even when curved. The device was curved on a concave surface, fixed to a cylindrical pedestal, and mounted on a package using wire bonding to implement a cylindrically curved CMOS image sensor with a curvature radius of 20 mm. Using the fabricated CMOS image sensor, we successfully captured video images (320 × 240 pixels). A comparison between these images and those obtained from a flat CMOS image sensor showed that blurring at the lateral periphery of the images can be reduced using a single lens by curving the CMOS image sensor.

Authors

Institutions

Publication Details

Journal
IEEE Sensors Journal
Published
2025-06-30
DOI
https://doi.org/10.1109/jsen.2025.3582384
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Field Curvature Aberration Correction Using Cylindrically Curved CMOS Image Sensors

Shigeyuki Imura, Masahide Goto, Hiroto Sato
IEEE Sensors Journal
CCD and CMOS Imaging Sensors
article

Field Curvature Aberration Correction Using Cylindrically Curved CMOS Image Sensors

Shigeyuki Imura, Masahide Goto, Hiroto Sato
article en

Abstract

We demonstrate the lateral field curvature aberration correction of a lens employing a cylindrically curved complementary metal-oxide-semiconductor (CMOS) image sensor without using multiple lenses. By employing a silicon-on-insulator (SOI) structure and applying etching using xenon fluoride, we fabricated an extremely thin CMOS image sensor with an 11-μm thickness without causing damage to the CMOS circuitry. Because of the structural characteristics of SOI, i.e., extremely small thickness and high SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> content, the fabricated CMOS image sensor is flexible and does not break easily even when curved. The device was curved on a concave surface, fixed to a cylindrical pedestal, and mounted on a package using wire bonding to implement a cylindrically curved CMOS image sensor with a curvature radius of 20 mm. Using the fabricated CMOS image sensor, we successfully captured video images (320 × 240 pixels). A comparison between these images and those obtained from a flat CMOS image sensor showed that blurring at the lateral periphery of the images can be reduced using a single lens by curving the CMOS image sensor.

IEEE Sensors JournalVol. 25(15)
Japan Broadcasting Corporation (Japan) (JP)
Openalex Percentile: Top 87%
CCD and CMOS Imaging Sensors
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.