WSe<sub>2</sub> and rGO Heterojunction-Based UV-Visible Photodetector

This research focuses on the affordable Al/rGO/WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>/PEDOT: PSS/ITO/PET structured photodetector performance. The study examines the optical and electrical characteristics of the proposed photodetector. The device's performance is noted to be excellent at detecting light in the UV (ultraviolet) to Visible spectrum. The occurrence of photomultiplication in the carrier transport mechanism, results in high external quantum efficiency (EQE). For 350 nm (UV) and 400 nm (Vis), the EQEs and Responsivity (RS) measured with a 0.85V bias are 3.22×105% and 909A/W, 2.94×105% and 950A/W respectively. This highlights the possibility of producing effective optoelectronic devices using the rGO and WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Interface.

Authors

Institutions

Publication Details

Journal
IEEE Sensors Letters
Published
2025-06-30
DOI
https://doi.org/10.1109/lsens.2025.3584193
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

WSe2 and rGO Heterojunction-Based UV-Visible Photodetector

Shweta Tripathi, Tulika Bajpai
IEEE Sensors Letters
2D Materials and Applications
article

WSe2 and rGO Heterojunction-Based UV-Visible Photodetector

Shweta Tripathi, Tulika Bajpai
article en

Abstract

This research focuses on the affordable Al/rGO/WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>/PEDOT: PSS/ITO/PET structured photodetector performance. The study examines the optical and electrical characteristics of the proposed photodetector. The device's performance is noted to be excellent at detecting light in the UV (ultraviolet) to Visible spectrum. The occurrence of photomultiplication in the carrier transport mechanism, results in high external quantum efficiency (EQE). For 350 nm (UV) and 400 nm (Vis), the EQEs and Responsivity (RS) measured with a 0.85V bias are 3.22×105% and 909A/W, 2.94×105% and 950A/W respectively. This highlights the possibility of producing effective optoelectronic devices using the rGO and WSe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Interface.

IEEE Sensors LettersVol. 9(8)
Motilal Nehru National Institute of Technology (IN)
Openalex Percentile: Top 89%
2D Materials and Applications
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.