Solution-Processed In₂O₃ Doped 2-D MoS₂ Thin-Film Transistors With Improvement of Electrical Properties by UV/Ozone Treatment

In this paper, channel layer films of indium oxide (In2O3) solution doped with molybdenum disulfide (MoS2) were prepared at low temperature (250∘C). Then the electrical properties of thin-film transistors (TFTs) devices were investigated using ultraviolet/ozone (UV/Ozone) treatment process. The results show that the selection of the appropriate time for the UV/Ozone treatment process can effectively improve the electrical properties of In2O3-MoS2 TFTs devices, leading to the preparation of reliable electronic devices at low temperatures. Specifically, the 40 s UV/Ozone treatment TFTs have relatively high saturation mobility of 2.08 ±0.02 cm2V-1s-1 and on/off current ratio of 3.09× 106, as well as relatively low threshold voltage and subthreshold swing values of 3.74 ± 0.03 V and 0.61 ± 0.01 V, and stable electrical properties after 30 days of exposure to ambient air. The UV/Ozone treatment resulted in stable electrical characteristics compared to devices that were not treated with the process, which has potential in electronics applications and is expected to be widely used in semiconductors for a variety of emerging electronic devices.