Efficient and Stable Electroluminescent Devices From Sn/ErYb Silicate Co-Doped in Silica Film

Sn and Er<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Si<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub>:Yb co-doped SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-Sn/Er<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Si<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub>:Yb) thin films were successfully fabricated by using the sol-gel method. The Er-related near-infrared (NIR) luminescence performance was significantly enhanced by improving the quality of nanocrystals and introducing the energy transfer process of Yb. The designed electroluminescent device based on SiO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>-Sn/Er<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>Si<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub>:Yb film achieved visible and dual-wavelength NIR electroluminescence (EL). The Er-related NIR EL integrated intensity of the optimal device increased by more than 2 times compared to the Yb-free device. The optimal ErYb silicate electroluminescent devices also exhibited excellent performance in threshold voltage (~22 V), power efficiency (~2.6×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup>), and operational stability (>600 min), which is promising for the development of efficient and stable silicon-based NIR light sources.