Study On The Active Gate Drive Circuit With Variable IGBT Input Capacitance

This paper presents an active gate driver (AGD) circuit with dynamically adjustable input capacitance. AGD circuits optimize electromagnetic interference (EMI) and switching losses generated during switching by arbitrarily controlling the driving force of power semiconductor devices. However, conventional AGD circuits require complex control mechanisms, increasing circuit size and cost. The proposed method introduces a capacitor between the gate and emitter during the insulated gate bipolar transistor (IGBT) switching period, enabling switching characteristics to be controlled by varying the input capacitance. The effectiveness of the proposed method was demonstrated through experimental verification. The results indicate that this approach enhances the trade-off between high-frequency electromagnetic noise generated during IGBT switching and turn-off switching losses.