<i>Ab initio</i> quantum transport simulation of the sub-1 nm gate-length monolayer and bilayer α-MoTe <sub>2</sub> field-effect transistors
This work used DFT + NEGF to explore sub-1 nm Lg ML/BL α-MoTe ₂ FETs. The n-type ML α-MoTe ₂ FETs meets ITRS criteria for HP/LP, extending the application of ML α-MoTe ₂ in sub-1 nm Lg FETs. The p-type ML and BL α-MoTe ₂ FETs failed to meet ITRS criteria.
Authors
- Jichao Dong
- Mudasser Husain (ORCID: https://orcid.org/0000-0003-0749-5993)
- Linqiang Xu (ORCID: https://orcid.org/0000-0002-3820-0927)
- Yasser M. Z. Ahmed (ORCID: https://orcid.org/0000-0001-6152-4471)
- Nasir Rahman (ORCID: https://orcid.org/0000-0003-1978-7280)
- Shibo Fang (ORCID: https://orcid.org/0000-0002-8073-5474)
- Jing Lü (ORCID: https://orcid.org/0000-0002-6780-7322)
- Zongmeng Yang
- Xingyue Yang (ORCID: https://orcid.org/0009-0005-8908-1269)
Institutions
- Singapore University of Technology and Design (SG)
- Peking University (CN)
- Collaborative Innovation Center of Quantum Matter (CN)
- University of Management and Technology (PK)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01702e
- Citations
- 2
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.04