Flexible self-powered MoS<sub>2</sub>/LaVO<sub>3</sub> photodetector enhanced by graphene quantum dots interlayer

High-performance self-powered photodetectors (PDs) have attracted significant interest as highly efficient optoelectronic devices capable of operating without an external power source. In this study, we demonstrate a flexible MoS<sub>2</sub>/graphene quantum dots (GQDs)/LaVO<sub>3</sub>heterojunction PD fabricated on a polyethylene terephthalate substrate. The device performance was systematically evaluated with and without the GQDs interlayer. The incorporation of GQDs effectively suppresses charge recombination, leading to substantial improvements in key performance metrics such as responsivity, external quantum efficiency, and detectivity. Furthermore, the MoS<sub>2</sub>/GQDs/LaVO<sub>3</sub>PD exhibited excellent mechanical stability, maintaining stable photocurrent and dark current levels even after 3000 continuous bending cycles. These results highlight the potential of the MoS<sub>2</sub>/GQDs/LaVO<sub>3</sub>PD as a highly promising candidate for next-generation flexible optoelectronic applications.

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Publication Details

Journal
Nanotechnology
Published
2025-06-30
DOI
https://doi.org/10.1088/1361-6528/ade9cc
Citations
2
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.04

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article

Flexible self-powered MoS2/LaVO3 photodetector enhanced by graphene quantum dots interlayer

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2 citations
Nanotechnology
2D Materials and Applications
1.04
article

Flexible self-powered MoS2/LaVO3 photodetector enhanced by graphene quantum dots interlayer

Si Duck Oh, Dahee Kim, Dong Hee Shin, Hosun Lee, H Kim, Bo Gyu Choi, Do Hoon Kim
article en
2 citations

Abstract

High-performance self-powered photodetectors (PDs) have attracted significant interest as highly efficient optoelectronic devices capable of operating without an external power source. In this study, we demonstrate a flexible MoS<sub>2</sub>/graphene quantum dots (GQDs)/LaVO<sub>3</sub>heterojunction PD fabricated on a polyethylene terephthalate substrate. The device performance was systematically evaluated with and without the GQDs interlayer. The incorporation of GQDs effectively suppresses charge recombination, leading to substantial improvements in key performance metrics such as responsivity, external quantum efficiency, and detectivity. Furthermore, the MoS<sub>2</sub>/GQDs/LaVO<sub>3</sub>PD exhibited excellent mechanical stability, maintaining stable photocurrent and dark current levels even after 3000 continuous bending cycles. These results highlight the potential of the MoS<sub>2</sub>/GQDs/LaVO<sub>3</sub>PD as a highly promising candidate for next-generation flexible optoelectronic applications.

NanotechnologyVol. 36(27)
Gyeongguk National University (KR), Inha University (KR), Kyung Hee University (KR), Gwangju Institute of Science and Technology (KR), Korea Institute of Industrial Technology (KR)
National Research Foundation of Korea
Affordable and clean energy
Openalex Percentile: Top 24%
2D Materials and Applications
1.04
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