Determination of Radiation Characteristics of Samarium and Boron Doped Indium Oxide Thin Film by Simulation Method

Today, it is important to minimize the effects of radiation in environments where radiation is used. For this purpose, there are intensive studies on technological developments in many sectors such as medicine, material science and energy in order to protect from radiation or to use radiation more efficiently. One of these is the design and improvement of thin films. In some studies, different elemental additives can be used to improve the physical properties of thin films. In this study, 5%, 10% and 20% Samarium and Boron were doped into Indium Oxide thin film, which has high chemical stability, optical transparency, excellent electrical and semiconductor properties and is widely used in many fields such as displays, solar cells and sensors, and the radiation properties of the samples were tried to be determined with MCNP6.2 simulation program. The simulation results were compared with the values in the XCOM database and the acceptability of the error rates of the simulation was observed. According to the simulation analysis, it is thought that Samarium and Boron doped Indium Oxide thin film samples may be suitable for the samples and in this context, they can be used in related devices in radiation environments. This study will provide ideas for studies on doping different elements into thin films.