Compact modeling of hafnium oxide memristors including temperature effects based on conductive filaments

This paper presents a new physical insight into the switching behavior and operating mechanism of hafnium oxide (HfO₂) based on the temperature effect, by considering the microstructural characteristics and physical effects related to the switching process of the switching material. A compact model is established by accounting for the temperature-dependent ion migration and diffusion effects on the HfO₂ memristors. The model is simulated to observe its microscopic characteristics and conductive mechanism under different temperature effects. It is consistent with the actual behavior characteristics of the memristors. By introducing the 3D directional state variable memristor model with oxygen vacancy drift switching, the influence of internal joule heat on the transport and drift speed of the vacancy electrons and holes is included, which is the switching speed in the switching material. The memristor filament model is calibrated under pulse scanning to analyze the effects of filament length, filament area, and temperature on the switching speed. The proposed model can not only be applied to various electrode materials, but also provides a new perspective on the influence of temperature effects on the conductive mechanism of memristors.