Analysis of factors influencing the thermal characteristics of multichip parallel packaging in power devices

The miniaturization and integration of power semiconductor devices have significantly increased the power consumption and heat flux density of the devices, posing substantial challenges to device packaging. Existing silicon-based power devices are approaching their physical limits. In order to improve the temperature resistance capability and extend the service life of silicon-based power semiconductor devices, optimizing the thermal resistance at the package level has become a critical research focus. Based on the above problems, this paper first establishes a numerical heat conduction model for power devices, obtaining the temperature distribution of the device package structure through finite element discretization and numerical solution. The accuracy of the simulation modeling and methodology is then validated through experimental testing. Finally, this study investigates the thermal performance of multi-chip parallel device packaging, analyzing the influence of layout parameters such as chip number and spacing on thermal performance, and identifying optimization strategies for power device packaging. The findings provide theoretical references for improving the thermal performance of power device chip packaging.