Design of an 8-inch silicon carbide epitaxial reactor based on internal flow patterns

The increase in the size of silicon carbide (SiC) wafers not only allows for a higher number of chips to be manufactured on a single wafer but also reduces waste from edge chips. As wafer sizes gradually transition to 8 inches, advancements in SiC epitaxy technology are required to keep pace. In this paper, the structural design of an 8-inch SiC epitaxial reactor is carried out, and the effects of chamber height (<i>H</i>) in a high-cavity vertical hot-wall reactor and the equivalent diameter of the spray plate (<i>D_in</i>) on the flow field and SiC deposition process in the reactor are systematically analyzed. The results demonstrate how changes in reactor structural parameters influence the SiC deposition rate and uniformity. Additionally, critical dimensionless numbers associated with flow pattern transitions inside the reactor are identified, and suitable reactor structures are determined accordingly.