Off-diagonal thermoelectric effect and its gate tuning in molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl

We report on the off-diagonal (transverse) thermoelectric effect in the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl, originating from the coexistence of the two-dimensional hole-like and one-dimensional electron-like Fermi surfaces. The off-diagonal thermoelectric voltage corresponds to the anisotropy of the Seebeck coefficient and is proportional to the sample length perpendicular to the temperature gradient, reaching ∼90 μV/K in our sample. Also, we investigated the effect of electric-double-layer doping on the off-diagonal thermoelectric effect. Under hole doping, while the resistance significantly decreases, the off-diagonal Seebeck coefficient does not decrease probably because of pseudogap formation. As a result, hole doping increases the off-diagonal power factor by up to a factor of approximately 15 at the doped surface.

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Publication Details

Journal
Applied Physics Letters
Published
2025-06-30
DOI
https://doi.org/10.1063/5.0278441
Primary Topic
Organic and Molecular Conductors Research
Type
article
Field-Weighted Citation Impact
0.00

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article

Off-diagonal thermoelectric effect and its gate tuning in molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl

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article

Off-diagonal thermoelectric effect and its gate tuning in molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl

Hiroshi Yamamoto, Yoshiaki Daigo, Yoshitaka Kawasugi, Naoya Tajima, Reìzo Kato
article en

Abstract

We report on the off-diagonal (transverse) thermoelectric effect in the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl, originating from the coexistence of the two-dimensional hole-like and one-dimensional electron-like Fermi surfaces. The off-diagonal thermoelectric voltage corresponds to the anisotropy of the Seebeck coefficient and is proportional to the sample length perpendicular to the temperature gradient, reaching ∼90 μV/K in our sample. Also, we investigated the effect of electric-double-layer doping on the off-diagonal thermoelectric effect. Under hole doping, while the resistance significantly decreases, the off-diagonal Seebeck coefficient does not decrease probably because of pseudogap formation. As a result, hole doping increases the off-diagonal power factor by up to a factor of approximately 15 at the doped surface.

Applied Physics LettersVol. 126(26)
Toho University (JP), National Institutes of Natural Sciences (JP), RIKEN (JP), Institute for Molecular Science (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 91%
Organic and Molecular Conductors Research
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