Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires
A maximum of 180 mV/decade potentiometric response is discovered for InN quantum dots grown on self-formed core–shell InGaN nanowires, surpassing the thermodynamic Nernst limit of 2.3 kT/e = 59 mV/decade of analyte concentration at room temperature by more than three times. High stability and low drift are associated. The mechanism of the high potentiometric response is understood by the electron quantum partition and squeezing during the fractional electron transfer in the coupled InN quantum dot–core–shell InGaN nanowire structures with quantum-confined core upon the attachment of Cl− anions used as test analyte.
Authors
- Junyong Li
- Richard Nötzel (ORCID: https://orcid.org/0000-0003-2672-6363)
- Rongli Deng (ORCID: https://orcid.org/0009-0005-2908-0846)
- Haibin Lin (ORCID: https://orcid.org/0009-0006-4478-833X)
- Xuan Pu
- Guanzhao Yang
Institutions
- South China Normal University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-06-30
- DOI
- https://doi.org/10.1063/5.0256741
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00