Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires

A maximum of 180 mV/decade potentiometric response is discovered for InN quantum dots grown on self-formed core–shell InGaN nanowires, surpassing the thermodynamic Nernst limit of 2.3 kT/e = 59 mV/decade of analyte concentration at room temperature by more than three times. High stability and low drift are associated. The mechanism of the high potentiometric response is understood by the electron quantum partition and squeezing during the fractional electron transfer in the coupled InN quantum dot–core–shell InGaN nanowire structures with quantum-confined core upon the attachment of Cl− anions used as test analyte.

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Publication Details

Journal
Applied Physics Letters
Published
2025-06-30
DOI
https://doi.org/10.1063/5.0256741
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires

Junyong Li, Richard Nötzel, Rongli Deng, Haibin Lin et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Giant super-Nernstian potentiometric response of InN quantum dots on self-formed core–shell InGaN nanowires

Junyong Li, Richard Nötzel, Rongli Deng, Haibin Lin, Xuan Pu, Guanzhao Yang
article en

Abstract

A maximum of 180 mV/decade potentiometric response is discovered for InN quantum dots grown on self-formed core–shell InGaN nanowires, surpassing the thermodynamic Nernst limit of 2.3 kT/e = 59 mV/decade of analyte concentration at room temperature by more than three times. High stability and low drift are associated. The mechanism of the high potentiometric response is understood by the electron quantum partition and squeezing during the fractional electron transfer in the coupled InN quantum dot–core–shell InGaN nanowire structures with quantum-confined core upon the attachment of Cl− anions used as test analyte.

Applied Physics LettersVol. 126(26)
South China Normal University (CN)
Openalex Percentile: Top 91%
GaN-based semiconductor devices and materials
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