Enhanced high‐temperature piezoelectric performance of Bi ₄ Ti ₃ O ₁₂ ‐based ceramics via multi‐element co‐doping and domain engineering

Abstract High‐temperature piezoelectric ceramics are critical for aerospace and other advanced applications, yet achieving high sensitivity and stability under elevated temperatures remains challenging. In this study, we employ a multi‐element co‐doping strategy combined with domain engineering to significantly enhance the piezoelectric performance and Curie temperature of Bi 4 Ti 3 O 12 (BIT)‐based ceramics. Using a solid‐state reaction method, W 6+ /Nb 5+ /Ta 5+ /Sb 3+ non‐equivalently co‐doped BIT ceramics were synthesized, achieving a high piezoelectric coefficient ( d 33 ) of 35 pC N −1 , an elevated Curie temperature of 687 °C, and an increased resistivity of 2.9 × 10 6 Ω cm at an optimal doping level of x = 0.02. This study further reveals the impact of poling conditions on domain structure, providing new insights for enhancing piezoelectric properties through domain configuration. A second high‐voltage, short‐duration poling process promotes the formation of large domains, underscoring the role of domain rearrangement in augmenting piezoelectric activity. This work demonstrates the potential of BIT‐based ceramics in high‐temperature sensing and precision actuation applications, presenting a novel strategy for designing high‐performance piezoelectric materials for extreme environments.