The Challenges of Graphene Nanoribbons for MOSFET Channel

Graphene nanoribbon (GNR) has been reported as a solution for Graphenes zero bandgap problem as channel material for Metal Oxide Semiconductor Field Effect Transistor (MOSFET). By quantum confinement and atom engineering, GNR provides seemingly new hope for maintaining the advantages of Graphene while solving bandgap problems. However, GNR-based MOSFETs face a number of challenges that need to be addressed to fully utilize their potential. In this paper, we discuss the challenges associated with using GNR as the material for MOSFET channel.