From Silicon to Wide Bandgap Semiconductors: Exploration of Compound Semiconductors in High Frequency and High Power Devices

As electronic systems become more demanding in terms of power density, thermal stability, and operating frequency, the performance limitations of traditional silicon-based semiconductors become increasingly apparent. The superior electrical and thermal properties of compound semiconductors like gallium nitride (GaN) and silicon carbide (SiC) have led to their classification as wide-bandgap (WBG) materials, attracting significant attention for their potential to meet the demands of next-generation devices. This study begins by comparing the key physical properties of typical semiconductor materials, including Si, GaAs, GaN and SiC. Then, the advantages of compound semiconductors in high-frequency and high-power applications are studied through representative scenarios such as 5G RF power amplifiers, electric vehicle (EV) power modules, and photovoltaic inverters. This study uses a qualitative approach, integrating insights from recent academic literature and industry case studies. The research show that GaN and SiC have significant advantages in terms of energy efficiency and thermal management, making them strong candidates to replace silicon in advanced electronic systems. GaN is particularly well-suited for high-frequency and RF applications, whereas SiC excels in high-voltage and power conversion scenarios. Their complementary nature also provides opportunities for heterogeneous integration. This paper concludes that the future development of compound semiconductors will focus on advancing ultra-wide bandgap materials and achieving heterogeneous integration for superior performance, while the main challenges lie in reducing manufacturing costs, improving material quality, and enhancing long-term device reliability.