Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching

This study investigates the use of radio frequency air plasma as an eco-friendly method to rapidly and reversibly tailor the surface properties of graphene oxide (GO) films. We observed a transition from hydrophilic (contact angle ∼55°) to superhydrophilic (<10°) with short plasma exposure, attributed to a synergistic combination of surface modification and etching. Spectroscopic analyses (FTIR, XPS) revealed early stage formation of carbonyl groups and reduction of hydroxyls, while longer treatments induced atomic-level etching (AFM) and structural changes (XRD). This surface engineering enhanced the dielectric properties of GO films but led to reduced aqueous stability. The elucidated interplay between plasma-induced functionalization and etching provides valuable insights for the controlled modification of GO surfaces for various applications, including advanced dielectrics.

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Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-06-29
DOI
https://doi.org/10.1021/acsaelm.5c00939
Citations
8
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
4.14

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article

Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching

Rebecca Cortez, Ivan Vlassiouk, Yijing Stehle, Sandra Schujman et al.
8 citations
ACS Applied Electronic Materials
Graphene research and applications
4.14
article

Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching

Rebecca Cortez, Ivan Vlassiouk, Yijing Stehle, Sandra Schujman, Timothy Barnum
article en
8 citations

Abstract

This study investigates the use of radio frequency air plasma as an eco-friendly method to rapidly and reversibly tailor the surface properties of graphene oxide (GO) films. We observed a transition from hydrophilic (contact angle ∼55°) to superhydrophilic (<10°) with short plasma exposure, attributed to a synergistic combination of surface modification and etching. Spectroscopic analyses (FTIR, XPS) revealed early stage formation of carbonyl groups and reduction of hydroxyls, while longer treatments induced atomic-level etching (AFM) and structural changes (XRD). This surface engineering enhanced the dielectric properties of GO films but led to reduced aqueous stability. The elucidated interplay between plasma-induced functionalization and etching provides valuable insights for the controlled modification of GO surfaces for various applications, including advanced dielectrics.

ACS Applied Electronic MaterialsVol. 7(14)
Oak Ridge National Laboratory (US), Union College (US), Center for Nanophase Materials Sciences
Division of Civil, Mechanical and Manufacturing Innovation, Oak Ridge National Laboratory
Openalex Percentile: Top 5%
Graphene research and applications
4.14
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Plasma-Induced Tailoring of Graphene Oxide Surfaces for Electrochemical Applications: Functionalization and Etching — Rebecca Cortez, Ivan Vlassiouk, et al. · ACS Applied Electronic Materials (2025) | TGRS Research Map | TGRS