Strain relaxation in halide perovskites via 2D/3D perovskite heterojunction formation

Applying mechanical strain and strain engineering to halide perovskites has endowed them with intriguing properties. However, an in-depth understanding of mechanical strain, including residual strain in halide perovskites, remains incomplete, coupled with the critical challenge of decoupling strain effects from other interferences. Here, we examine the relaxation of residual tensile strain in three-dimensional (3D) halide perovskites through 2D/3D perovskite heterojunction formation. The 2D perovskite induces structural fragmentation in 3D perovskites, facilitating plastic relaxation of tensile strain. By isolating extrinsic crystalline phase interference and exciton-related optical disturbances, we observe that 3D perovskites retain high crystallinity only with moderate tensile strain relaxation. This moderate relaxation enhances optoelectronic properties in 3D perovskites, including broadened band-to-band absorption and prolonged charge carrier lifetime, markedly contributing to an increase in the maximum attainable power conversion efficiency in photovoltaic devices. Our findings outline conditions for strain relaxation that optimize optoelectronic properties, advancing strain engineering in halide perovskites.

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Publication Details

Journal
Science Advances
Published
2025-06-27
DOI
https://doi.org/10.1126/sciadv.adu3459
Citations
6
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
4.38
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article

Strain relaxation in halide perovskites via 2D/3D perovskite heterojunction formation

Weidong Xu, Lei Su, Yonglong Shen, Aobo Ren et al.
6 citations
Science Advances
Perovskite Materials and Applications
4.38
article

Strain relaxation in halide perovskites via 2D/3D perovskite heterojunction formation

Weidong Xu, Lei Su, Yonglong Shen, Aobo Ren, J.X. Bi, Steven John Hinder, Kieran W. P. Orr, Hanlin Hu, Guosheng Shao, Samuel D. Stranks, D.-X. Liu, Wei Zhang, Fei Wang, Jing Zhang, Xueping Liu, Bowei Li, Xiaoguang Luo
article en
6 citations

Abstract

Applying mechanical strain and strain engineering to halide perovskites has endowed them with intriguing properties. However, an in-depth understanding of mechanical strain, including residual strain in halide perovskites, remains incomplete, coupled with the critical challenge of decoupling strain effects from other interferences. Here, we examine the relaxation of residual tensile strain in three-dimensional (3D) halide perovskites through 2D/3D perovskite heterojunction formation. The 2D perovskite induces structural fragmentation in 3D perovskites, facilitating plastic relaxation of tensile strain. By isolating extrinsic crystalline phase interference and exciton-related optical disturbances, we observe that 3D perovskites retain high crystallinity only with moderate tensile strain relaxation. This moderate relaxation enhances optoelectronic properties in 3D perovskites, including broadened band-to-band absorption and prolonged charge carrier lifetime, markedly contributing to an increase in the maximum attainable power conversion efficiency in photovoltaic devices. Our findings outline conditions for strain relaxation that optimize optoelectronic properties, advancing strain engineering in halide perovskites.

Science AdvancesVol. 11(26)
University of Electronic Science and Technology of China (CN), Queen Mary University of London (GB), Shenzhen Polytechnic University (CN), Nankai University (CN), University of Cambridge (GB), University of Surrey (GB), Zhengzhou University (CN), Stanford University (US)
Affordable and clean energy
Openalex Percentile: Top 5%
Perovskite Materials and Applications
4.38
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