Compositional Mapping of Ion Implantation Damage in Al _{1− <i>x</i>} Ga _<i>x</i> N via a Two‐Step High‐Resolution X‐Ray Diffraction Simulation

A two‐step high‐resolution X‐ray diffraction fitting method is applied to Ar + ‐implanted Al 1 – x Ga x N layers (0 ≤ x ≤ 1) to extract depth‐resolved strain ( ε ⊥ ), Debye–Waller factors (DW), and atomic displacements (⟨Δ d ⟩). In AlN, despite strong local distortion at high fluence, the gradual strain profiles suggest a capacity for uniform stress redistribution. The damage is most severe at x ≈ 0.5, where ⟨Δ d ⟩ exceeds 2.9 Å and DW drops below 0.1, suggesting defect clustering. Ga‐rich films show partial recovery, though still marked by high displacements and static disorder. Stopping and Range of Ions in Matter (SRIM) simulations align closely with the experimental profiles. The analysis reveals three overlapping damage regimes across the Al 1 – x Ga x N series, with Al‐rich, mid‐range, and Ga‐rich compositions exhibiting distinct structural responses to implantation. Beyond nitrides, the method is also demonstrated on hexagonal 4H‐SiC, orthorhombic α‐MoO 3 , and monoclinic β‐Ga 2 O 3 , confirming its broad applicability to ion‐implanted single crystals.