Strength and Reliability of Adhesive-Bonded Joints in Semiconductor Packaging: A Computational Analysis

Adhesive bonded joints are increasingly used in various industries due to their enhanced structural integrity and reliability. However, successful implementation depends on understanding factors such as bond thickness. It is in fact a crucial parameter for strength and reliability. By exploring the bond thickness and joint strength relationship, strategies can be developed to overcome vulnerabilities in the semiconductor industry, especially in chipset packaging. This study presents enhanced joint designs and their reliability. Computational analysis of adhesive-bonded joints with polymorphic bond thickness is carried out using the Finite Element Method to study the effects of bond thickness. Three-dimensional models of the adhesive-bonded connections are being developed using software with bond thicknesses ranging from 1 nm to 100 nm. Results show that at 100 nm thickness, the maximum normal stress reached approximately 3.66 MPa at the GaN-resin interface, compared to 2.55 MPa at the InN-resin interface. Shear stress peaked symmetrically around 45°, while displayed sharp drops from peak values near 0° to almost zero by 90°, depending on thickness. Stress singularity intensity decreased as adhesive thickness was reduced, indicating less stress concentration. Notably, joints with GaN exhibited 43.5% higher peak stress values compared to InN under identical conditions. This study elucidates insights regarding the intricate relation between resin thickness and joint performance, shedding light on their mechanical behavior and providing valuable data on the modal analysis for different substrates. Overall, the study reveals that varying resin thicknesses significantly affect stress distribution and vibrational behavior in adhesive-bonded joints, providing insights into joint performance and potential improvements in modern engineering.