Low temperature atomic layer deposition of boron nitride using the <i>in situ</i> decomposition of ammonium carbamate
Here, we report on a new atomic layer deposition (ALD) process for the growth of amorphous boron nitride thin films at low temperatures (100-275 °C) using carbamic acid, a highly reactive intermediate species found in the decomposition of ammonium carbamate, as the nitrogen source.
Authors
- Maxim Ilyn (ORCID: https://orcid.org/0000-0002-4052-7275)
- Victor O. Koroteev (ORCID: https://orcid.org/0000-0002-4473-9689)
- Maxim R. Ryzhikov (ORCID: https://orcid.org/0000-0003-3983-6596)
- Ana Álvarez-Yenes (ORCID: https://orcid.org/0000-0002-0278-5783)
- Mato Knez (ORCID: https://orcid.org/0000-0002-9850-1035)
- S. G. Kozlova (ORCID: https://orcid.org/0000-0001-7114-8676)
Institutions
- Ikerbasque (ES)
- University of the Basque Country (ES)
- CIC nanoGUNE (ES)
- Material Physics Center (ES)
- Nikolaev Institute of Inorganic Chemistry (RU)
Publication Details
- Journal
- Chemical Communications
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cc02613j
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46