Recent Progress on Preparation of 3C-SiC Single Crystal
201899; 2. 2004443. 201306) : (SiC) SiC Si (Insulated Gate Bipolar Transistors, IGBTs)SiC ( MOSFET)SiC (Electric Vertical Take-off and Landing, eVTOL)AR SiC 3C-SiC (500 W/(mK))( 300 cm/(Vs)) 3C-SiC (CVD
Authors
- Pan Gao (ORCID: https://orcid.org/0000-0001-8735-5151)
- Jing‐Juan Xu (ORCID: https://orcid.org/0000-0001-9579-9318)
- Shaoyi Jiang (ORCID: https://orcid.org/0000-0001-9863-6899)
- Kun Chen (ORCID: https://orcid.org/0000-0003-3579-5467)
- Xuechao LIU
- Meibo Tang (ORCID: https://orcid.org/0000-0003-4109-4157)
- Weiyang He (ORCID: https://orcid.org/0000-0003-4861-7555)
- Xiuhong Pan
Publication Details
- Journal
- Journal of Inorganic Materials
- Published
- 2025-06-27
- DOI
- https://doi.org/10.15541/jim20250081
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00