Thermal and Dimensional Stability of Photocatalytic Material ZnPS<sub>3</sub> Under Extreme Environmental Conditions

Abstract Zinc phosphorus trisulfide (ZnPS 3 ), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. Its optical and structural properties are explored under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). The experimental results identify a pressure‐induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS 3 demonstrates robust stability across a broad pressure range up to 24.5 GPa. DFT calculations support these observations and further predict a semiconductor‐to‐semimetal transition at 100 GPa, while PL measurements reveal defect‐assisted emission that quench under pressure due to enhanced non‐radiative recombination. At cryogenic temperatures, PL quenching intensifies as non‐radiative processes dominate, driven by a rising Grüneisen parameter and reduced phonon population. Cryogenic X‐ray diffraction (XRD) also reveals a high mean thermal expansion coefficient (TEC) of (4.369 ± 0.393) × 10 −5 K −1 , among the highest reported for 2D materials. This unique combination of tunable electronic properties under low pressure and high thermal sensitivity makes ZnPS 3 a strong candidate for sensing applications in extreme environments.

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Publication Details

Journal
Advanced Electronic Materials
Published
2025-06-27
DOI
https://doi.org/10.1002/aelm.202500093
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19

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article

Thermal and Dimensional Stability of Photocatalytic Material ZnPS3 Under Extreme Environmental Conditions

Damian Włodarczyk, Luis Marcelo Lozano, Michael A. Susner, A. Suchocki et al.
3 citations
Advanced Electronic Materials
Chalcogenide Semiconductor Thin Films
2.19
article

Thermal and Dimensional Stability of Photocatalytic Material ZnPS3 Under Extreme Environmental Conditions

Damian Włodarczyk, Luis Marcelo Lozano, Michael A. Susner, A. Suchocki, Vivian J. Santamaría‐García, Ajeesh Kumar Somakumar, Saranya Narayanan, P. Sybilski, Julio L. Palma, Svetlana V. Boriskina, Ryan Siebenaller, Emmanuel Rowe, Abhishek Mukherjee
article en
3 citations

Abstract

Abstract Zinc phosphorus trisulfide (ZnPS 3 ), a promising material for photocatalysis and energy storage, is shown in this study to exhibit remarkable stability under extreme conditions. Its optical and structural properties are explored under high pressure and cryogenic temperatures using photoluminescence (PL) spectroscopy, Raman scattering, and density functional theory (DFT). The experimental results identify a pressure‐induced phase transition starting at 6.75 GPa and stabilizing by 12.5 GPa, after which ZnPS 3 demonstrates robust stability across a broad pressure range up to 24.5 GPa. DFT calculations support these observations and further predict a semiconductor‐to‐semimetal transition at 100 GPa, while PL measurements reveal defect‐assisted emission that quench under pressure due to enhanced non‐radiative recombination. At cryogenic temperatures, PL quenching intensifies as non‐radiative processes dominate, driven by a rising Grüneisen parameter and reduced phonon population. Cryogenic X‐ray diffraction (XRD) also reveals a high mean thermal expansion coefficient (TEC) of (4.369 ± 0.393) × 10 −5 K −1 , among the highest reported for 2D materials. This unique combination of tunable electronic properties under low pressure and high thermal sensitivity makes ZnPS 3 a strong candidate for sensing applications in extreme environments.

Advanced Electronic MaterialsVol. 11(13)
United States Air Force Research Laboratory (US), Pennsylvania State University (US), National Academies of Sciences, Engineering, and Medicine (US), Institute of Physics (PL), The Ohio State University (US), Massachusetts Institute of Technology (US), Tecnológico de Monterrey (MX), Polish Academy of Sciences (PL)
Siebel Scholars Foundation, Asian Office of Aerospace Research and Development, Instituto Tecnológico y de Estudios Superiores de Monterrey, Multidisciplinary University Research Initiative, Division of Materials Research, Air Force Office of Scientific Research, Army Research Office
Openalex Percentile: Top 12%
Chalcogenide Semiconductor Thin Films
2.19
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