Engineering Quantum Emitters in 2D Materials

Abstract Quantum emitters have emerged as critical components for quantum sensing and photonic technologies, with scalable arrays of identical emitters offering particular promise for generating indistinguishable single photons at elevated rates. Recent advances have revealed diverse classes of quantum emitters across 2D material systems, yet achieving spectral uniformity remains a key challenge for practical quantum applications. This review examines recent breakthroughs in engineering 2D quantum emitters through four systematic approaches: First, this work analyzes emission mechanisms distinguishing defect‐based systems from excitonic platforms in transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN). Second, this work evaluates top‐down and bottom‐up fabrication techniques, highlighting strain engineering's role in positioning accuracy for TMDs emitters. Third, this work demonstrates photonic environment control through plasmonic nanocavities and dielectric metasurfaces. Finally, this work compares spectral tuning methods including electrostatic gating and strain modulation, while discussing remaining challenges in achieving photon indistinguishability across emitter arrays. The roadmap concludes by identifying two critical development pathways: (1) the flexibility of emission engineering for individual emitters, and (2) hybrid integration with photonic circuits for quantum networking applications. Through systematic material engineering and photonic hybridization, 2D quantum emitters are poised to enable chip‐scale quantum light sources meeting scalability requirements for fault‐tolerant quantum applications.