Stress-dependent MOSFET Model Valid in All Operating Regions For Use in Circuit Simulations

This paper presents a stress-dependent MOSFET model which is valid from strong to weak inversion, based on the extension of the previous model that covers only the operation in strong inversion. The presented model operates for any MOSFET model type since it does not depend on model parameters. It can be used to simulate complex circuits and compensate for the effects caused by mechanical stress. Mechanical stress is caused by IC packaging and can potentially bring the circuits out of specifications, but stress-aware device models are not standard in circuit simulators which limits the ability to simulate these effects. A measurement method is presented and used to calibrate and validate the models.