26 GHz Solid State Power Amplifier in a 0.15-μm GaN on SiC technology

This paper presents a solid state power amplifier (PA) at 24 - 28 GHz in a 0.15-μm GaN on SiC technology. The PA adopts single-ended architecture containing power and a driver stages based on common source topology to get an output power and a gain greater than 32 dBm, and 20 dB, respectively. Harmonic balance(HB) simulations are performed to optimize the single-ended PA for wideband characteristics. Optimum stability and matching networks are introduced to meet the desired characteristics. The performance of the PA is experimentally characterized and a good co-relation between simulation and measurement is found. The PA shows a peak small-signal gain of 21.5 dB at 26 GHz. In terms of large-signal excitation, the PA delivers a maximum output power greater 32 dBm at 26 GHz with peak PAE of at least 36 %. The PA demonstrates high output power without power combining and it occupies an area of 4 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The PA is suitable for various applications targeting frequency band of 24-28 GHz.