A 10-12 GHz Embedded Multi-Band LC Notch Filter Low-Noise Amplifier With High Anti-Interference

In this article, an X-Band (10-12 GHz) embedded multi-band LC notch filter low-noise amplifier (LNA) employing a three-stage current reuse (CR) technique and a T-type attenuator configuration is presented. The proposed notch filter is based on a LC resonant network, which has two modes of connection to the main RF path, achieving significant out-of-band suppression level of 25 dB and 50 dB in the ranges of 14-18 GHz and 26-33 GHz, respectively. The LNA is simulated using a 0.15-um GaAs pHEMT process, the simulated results show a gain exceeding 21 dB, a noise figure (NF) below 1.15 dB at 12 GHz, input and output return losses (S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</inf> and S<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</inf>) are below -15 dB and below -20 dB, respectively. Additionally, it is unconditional stability in the whole frequency range. The consumption of the LNA is 64.4 mW under the 3.3-V supply voltage. The overall chip area is 1.7 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> including all pads.