TNURML: Triple-Node-Upset-Recovery Magnetic Latch Design with Non-Volatility for Aerospace Applications

As semiconductor technology advances, radiative-particle-induced soft errors and power consumption are becoming major concerns for digital circuits in aerospace applications. Radiation hardening by design and magnetic tunnel junctions (MTJs) are widely employed to address these concerns. In this paper, a novel latch, called TNURML, that can completely recover from triple-node upsets (TNUs), is proposed. The embedded MTJs provide non-volatility and are compatible with traditional CMOS processes. The TNURML employs a TNU-recovery module as well as a pair of MTJs for backup and recovery operations. Extensive simulations demonstrate the excellent TNU-recovery capability and non-volatility of the TNURML latch at the cost of slightly increased area overhead. The proposed TNURML latch reduces 43.63% of delay and 48.23% of power on average when compared to the state-of-the-art latches.