A Low Power Integrate-and-Fire Neuron Circuit Using an a-IGZO-based Thin-Film Transistor with an Inverter Transition Point Programming Method

This work proposes an Integrate-and-fire (I&F) neuron circuit using amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with low power consumption and programmable inverter transition point. The proposed neuron circuit can reduce the power consumption of the neuron circuit by limiting the short-circuit current. Moreover, the neuron circuit has the advantage of extending the refractory period. The operation of the proposed neuron circuit is verified through HSPICE. The simulation results show that the circuit performs as a low-power I&F model during integration and spiking.