DTQ-16T: Double Node Upset Tolerant Quadruple SRAM for Space Applications

The high-energy particles in space cause SRAM failures. The vulnerability of SRAM increases at lower technology, and it flips the SRAM cell’s data due to single-event multi-node-upset. Various state-of-the-art radiation hardened by design SRAMs have been proposed; however, most designs tackle Single Node Upset (SNU). This paper presents DNU Tolerant Quadruple-16T (DTQ-16T) SRAM with no read disturb. The most important feature of the proposed design is its immunity towards radiation, where it recovers from all possible upsets, whether SNU, DNU, Triple Node Upset (TNU), or Quadruple Node Upset (QNU) for storage ‘1’. On top of it, the proposed design gives very high read stability, Write Access Time, and Wordline Write Trip Voltage (WWTV) than most of the existing radiation-hardened SRAMs. Finally, the post-layout and Monte Carlo simulations validate the efficiency of the proposed SRAM in commercial CMOS 28nm technology.